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this is information on a product in full production. december 2012 doc id 14169 rev 3 1/12 12 STW55NM60ND n-channel 600 v, 0.047 typ., 51 a fdmesh? ii power mosfet (with fast diode) in a to-247 package datasheet ? production data features the worldwide best r ds(on) amongst the fast recovery diode devices in to-247 100% avalanche tested low input capacitance and gate charge low gate input resistance high dv/dt and avalanche capabilities application switching applications description this fdmesh? ii power mosfet with intrinsic fast-recovery body diode is produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on- resistance and superior switching performance. it is ideal for bridge topologies and zvs phase-shift converters. figure 1. internal schematic diagram type v dss (@t j max) r ds(on) max i d STW55NM60ND 650 v < 0.060 51 a to-247 1 2 3 table 1. device summary order code marking package packaging STW55NM60ND 55nm60nd to-247 tube www.st.com
contents STW55NM60ND 2/12 doc id 14169 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW55NM60ND electrical ratings doc id 14169 rev 3 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 51 a i d drain current (continuous) at t c = 100 c 32 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 204 a p tot total dissipation at t c = 25 c 350 w dv/dt (2) 2. i sd 51 a, di/dt 600 a/ s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.36 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 1600 mj
electrical characteristics STW55NM60ND 4/12 doc id 14169 rev 3 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load. drain source voltage slope v dd =480 v, i d = 51 a, v gs =10 v 30 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 25.5 a 0.047 0.060 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration= 300 s, duty cycle 1.5% forward transconductance v ds = 15 v , i d = 25.5 a 45 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 5800 300 30 pf pf pf c oss eq. (2) 2. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v 900 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 25.5 a r g =4.7 , v gs = 10 v (see figure 19), (see figure 14) 33 68 188 96 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 51 a, v gs = 10 v, (see figure 15) 190 30 90 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain 2.5
STW55NM60ND electrical characteristics doc id 14169 rev 3 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 51 204 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 51 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 51 a, v dd = 60 v di/dt = 100 a/ s (see figure 16) 200 1.8 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 51 a,v dd = 60 v di/dt = 100 a/ s, t j = 150 c (see figure 16) 280 3.4 24 ns c a
electrical characteristics STW55NM60ND 6/12 doc id 14169 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on-resistance
STW55NM60ND electrical characteristics doc id 14169 rev 3 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature
test circuits STW55NM60ND 8/12 doc id 14169 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform
STW55NM60ND package mechanical data doc id 14169 rev 3 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STW55NM60ND 10/12 doc id 14169 rev 3 figure 20. to-247 drawing 0075325_g
STW55NM60ND revision history doc id 14169 rev 3 11/12 5 revision history table 9. document revision history date revision changes 16-nov-2007 1 first release. 22-apr-2008 2 document status promoted from preliminary data to datasheet. 19-dec-2012 3 title changed on the cover page. minor text changes. updated section 4: package mechanical data .
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